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Beilstein J. Nanotechnol. 2022, 13, 817–827, doi:10.3762/bjnano.13.72
Figure 1: (a) Typical force–distance Fn(Z) curve recorded with a SiOx tip on the eutectic Ga–In–Sn melt at ro...
Figure 2: Contact AFM topography images recorded on the surface of eutectic Ga–In–Sn with (a) SiOx, (b) PtSi,...
Figure 3: Typical (a–c) Fn- and (d–f) Fl-traces recorded in contact AFM mode on the surface of the eutectic G...
Figure 4: Fad(T) plots for different pulling velocity values dZ/dt = 0.25–25 mm/s for (a) a SiOx tip, (b) a P...
Figure 5: (a, d, g) Interfacial energy γ as a function of the temperature determined with dZ/dt = 0.25–25 mm/...
Figure 6: XPS results for the eutectic Ga–In–Sn melt (a) before and (b) after heating at 100 °C for 3 h.
Figure 7: SEM images of the AFM tips used to collect the results presented in Figure 2: (a, d) SiOx tip, (b, e) Au ti...